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N02L163WN1AB1-55I

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型号: N02L163WN1AB1-55I
PDF文件:
  • N02L163WN1AB1-55I PDF文件
  • N02L163WN1AB1-55I PDF在线浏览
功能描述: 2Mb Ultra-Low Power Asynchronous CMOS SRAM
PDF文件大小: 272.56 Kbytes
PDF页数: 共11页
制造商: NANOAMP[NanoAmp Solutions, Inc.]
制造商LOGO: NANOAMP[NanoAmp Solutions, Inc.] LOGO
制造商网址: http://www.nanoamp.com
捡单宝N02L163WN1AB1-55I
供应商
型号
品牌
封装
批号
库存数量
备注
询价
  • 深圳市百视威讯电子科技有限公司

    8

    0755-2738127418098996457董先生华强广场C座18J11011910

  • N02L163WN1AB1-55I
  • 一级代理 
  • 一级代理 
  • 一级代理 
  • 568000 
  • 一级代理放心采购 

  • 深圳市安富世纪电子有限公司

    7

    18924630310刘清影华强北路1019号华强广场A16楼11012351

  • N02L163WN1AB1-55I
  • PANASONIC 
  • BGA 
  • 19+ 
  • 7500 
  • 代理渠道!终端免费索样! 

PDF页面索引
120%
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N02L163WN1A
(DOC# 14-02-014 REV L ECN# 01-1000) 1
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16bit
Overview
The N02L163WN1A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE
) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB
and LB) allow the upper and lower bytes to be
accessed independently. The N02L163WN1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Features
Single Wide Power Supply Range
2.3 to 3.6 Volts
Very low standby current
2.0µA at 3.0V (Typical)
Very low operating current
2.0mA at 3.0V and 1µs (Typical)
Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
Simple memory control
Single Chip Enable (CE
)
Byte control for independent byte operation
Output Enable (OE
) for memory expansion
Low voltage data retention
Vcc = 1.8V
Very fast output enable access time
30ns OE
access time
Automatic power down to standby mode
TTL compatible three-state output driver
Compact space saving BGA package avail-
able
Product Family
Part Number Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Current (I
SB
),
Typical
Operating
Current (Icc),
Typical
N02L163WN1AB 48 - BGA
-40
o
C to +85
o
C
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA2 mA @ 1MHz
N02L163WN1AT 44 - TSOP II
N02L163WN1AB1 48 - BGA Pb-Free
N02L163WN1AT2 44 - TSOP II Green
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