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N02L1618C1AB2-70I

N02L1618C1AB2-70I首页预览图
型号: N02L1618C1AB2-70I
PDF文件:
  • N02L1618C1AB2-70I PDF文件
  • N02L1618C1AB2-70I PDF在线浏览
功能描述: 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
PDF文件大小: 261.97 Kbytes
PDF页数: 共11页
制造商: NANOAMP[NanoAmp Solutions, Inc.]
制造商LOGO: NANOAMP[NanoAmp Solutions, Inc.] LOGO
制造商网址: http://www.nanoamp.com
捡单宝N02L1618C1AB2-70I
PDF页面索引
120%
Stock No. 23265-A 5
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N02L1618C1A
Advance Information
Power Savings with Page Mode Operation (WE = V
IH
)
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Page Address (A4 - A16 )
LB
, UB
OE
CE
Word Address (A0 - A3)
Open page
Word 1 Word 2
Word 16
...
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