LN60A01
600V, Triple N-Channel MOSFET
with Common Gate Control
LN60A01EP Rev. 0.91 www.MonolithicPower.com 1
1/15/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2010 MPS. All Rights Reserved.
The Future of Analog IC Technology
DESCRIPTION
The LN60A01 is a three channel, 600V N-
Channel, enhancement mode power FET
manufactured in MPS's proprietary, high-
voltage DMOS technology.
This advanced technology has been especially
tailored to minimize the on-state resistance,
provide superior switching performance, and
withstand high energy pulses in the avalanche
and commutation modes. This device is well
suited for high efficiency switched mode power
supplies and active power factor correction.
The LN60A01 is available in PDIP8 and SOIC8
package.
FEATURES
• 600V Breakdown Voltage
• Three N-Channel MOSFETs
• One Gate control to All Three FETs
• Rds(on)=200Ω at Vgs=10V
• Switching Current>0.1A
• Fast Switching
APPLICATIONS
• High Efficiency AC/DC Adaptor
• Offline Switching Power Supply
• Active Power Factor Correction
“MPS” and “The Future of Analog IC Technology” are Registered Trademarks
of Monolithic Power Systems, Inc.
TYPICAL APPLICATION
A
400V 400V 400V
Gate
R1
470k
R2
470k
R3
470k
V
CC1
V
CC2
V
CC3
B C
