©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2786
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base V oltage 30 V
V
CEO
Collector-Emitter V oltage 20 V
V
EBO
Emitter-Base Voltage 4 V
I
C
Collector Current 20 mA
P
C
Collector Power Dissipation 250 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=10µA, I
E
=0 30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=5mA, I
B
=0 20 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 4 V
I
CBO
Collector Cut-off Current V
CB
=30V, I
E
=0 0.1 µA
I
EBO
Emitter Cut-off Current V
EB
=4V, I
C
=0 0.1 µA
h
FE
DC Current Gain V
CE
=6V, I
C
=1mA 40 240
V
BE
(on) Base-Emitter O n Voltage V
CE
=6V, I
C
=1mA 0.72 V
V
CE
(sat) Collector-Emitter Saturat ion Voltage I
C
=10mA, I
B
=1mA 0.1 0.3 V
f
T
Current Gain Bandwidth Product V
CE
=6V, I
C
=1mA 400 600 MHz
C
ob
Output Capacitance V
CB
=6V, I
E
=0, f=1MHz 1.2 pF
C
c·rbb’
Collector-Base Time Constant V
CE
=6V, I
C
=1mA
f=31.9MHz
12 15 ps
NF Noise Figure V
CE
=6V, I
C
=1mA
R
S
=50Ω, f=100MHz
3.0 5.0 dB
G
PE
Power Gain V
CE
=6V, I
C
=1mA
f=100MHz
18 22 dB
Classification R O Y
h
FE
40 ~ 80 70 ~ 140 120 ~ 240
KSC2786
TV PIF Amplifier, FM Tuner RF Amplifier,
Mixer, Osc illa tor
• High Current Gain Bandwidth Product : f
T
=600MHz (TYP)
• High Power Gain : G
PE
=22dB at f=100MHz
1.Emitter 2. Collector 3. Base
TO-92S
1
