2001. 11. 29 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR331
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
HIGH SPEED SWITCHING.
FEATURES
ᴌ
Low Forward Voltage : V
F
=0.25(Typ.) @I
F
=5mA
ᴌSmall Package : USM.
MAXIMUM RATING (Ta=25ᴱ)
DIM
MILLIMETERS
A
B
D
E
1. ANODE 1
2. ANODE 2
3. CATHODE
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
MM
N
N
M
0.42 0.10
N
0.10 MIN
3
2
1
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
15 V
Reverse Voltage
V
R
10 V
Maximum (Peak) Forward Current
I
FM
100 * mA
Average Forward Current
I
O
50 * mA
Surge Current (10ms)
I
FSM
1 * A
Power Dissipation
P
D
100 mW
Junction Temperature
T
j
125
ᴱ
Storage Temperature Range
T
stg
-55ᴕ125
ᴱ
Operating Temperature Range
T
opr
-40ᴕ100
ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
I
F
=1mA
- 0.21 -
V
V
F(2)
I
F
=5mA
- 0.25 0.30
V
F(3)
I
F
=50mA
- 0.35 0.50
Reverse Current
I
R
V
R
=10V
- - 20
ỌA
Total Capacitance
C
T
V
R
=0V, f=1MHz
- 13 40 pF
* : Unit Rating. Total Rating=Unit Ratingᴧ1.5
Type Name
Marking
UW
