2003. 2. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR105S
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
High frequency rectification
(Switching regulators, converters, choppers)
FEATURES
Low Forward Voltage : V
F
max=0.55V.
Low Leakage Current : I
R
max=10 A.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. NC
2. ANODE
3. CATHODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P
7
2
1
3
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
Lot No.
DL
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
V
R
I
R
=50 A
50 - - V
Forward Voltage
V
F
I
F
=0.1A
- - 0.55 V
Reverse Current
I
R
V
R
=25V
- - 10
A
Total Capacitance
C
T
V
R
=10V, f=1MHz
- 7.7 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
50 V
Reverse Voltage
V
R
50 V
Average Forward Current
I
O
0.1 A
Non-repetitive Peak Surge Current
I
FSM
2 A
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55 125
