2008. 12. 8 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDP629UL
SILICON EPITAXIAL PIN TYPE DIODE
Revision No : 0
For antenna switches in mobile applications.
FEATURES
Array type (4 Diode in one package)
Low Capacitance
Low Series resistance
MAXIMUM RATING (Ta=25 )
ULP-12
MILLIMETERSDIM
G
F
TOP VIEW
SIDE VIEW
BOTTOM VIEW
A
B
C
G
D
E
F
A
B
E
C
12 7
1
6
D
2.50 0.05
+
_
1.20 0.05
+
_
0.20 0.05
+
_
0.40 0.05
+
_
0.25 0.05
+
_
0.45 0.05
+
_
Max 0.5
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
V
R
30 V
Forward Current
I
F
100 mA
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Current
I
R
V
R
=30V
- - 0.1
A
Forward Voltage
V
F
I
F
=10mA
- - 1.0 V
Total Capacitance
C
T
V
R
=1V, f=1MHz
- - 0.30 pF
Series Resistance
r
s
I
F
=10mA, f=100MHz
- - 1.3
ESD-Capability * -
C=200pF, R=0 ,
Both forward and reverse
direction 1 pulse
100 - -
* Failure cirterion : I
R
>100nA at V
R
=30V.
Type Name
Marking
P 9
Lot No.
EQUTVALENT CIRCUIT (TOP VIEW)
12 7
16
D2 D3
D1
D4