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SEMICONDUCTOR
TECHNICAL DATA
KDP620UL
SILICON EPITAXIAL PIN TYPE DIODE
Revision No : 0
For antenna switches in mobile applications.
FEATURES
Array type (6 Diode in one package)
Low Capacitance
Low Series resistance
MAXIMUM RATING (Ta=25 )
D1,D2, D5, D6 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
V
R
30 V
Forward Current
I
F
100 mA
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Current
I
R
V
R
=30V
- - 0.1
A
Forward Voltage
V
F
I
F
=10mA
- - 1.0 V
Total Capacitance
C
T
V
R
=1V, f=1MHz
- - 0.30 pF
Series Resistance
r
s
I
F
=10mA, f=100MHz
- - 1.3
ESD-Capability * -
C=200pF, R=0 ,
Both forward and reverse
direction 1 pulse
100 - - V
* Failure cirterion : I
R
>100nA at V
R
=30V.
Lot No.