1/2
SEMICONDUCTOR
TECHNICAL DATA
GM100HB06BLA
600V/100A
2-PACK IGBT MODULE
(Half - Bridge)
FEATURES
Trench NPT Technology
Low V
CE(sat)
Low Turn-off loss
Short tail current
Positive temperature coefficient
10us Short Circuit Capability
APPLICATION
Motor Controls
General purpose inverters
Servo Controls
INTERNAL CIRCUIT
2013. 5. 09 Revision No : 0
CHARACTERISTIC SYMBOL RATING UNIT
Collector-to-Emitter Voltage
V
CES
600 V
Gate-Emitter Voltage
V
GES
20
V
Continuous Collector Current
@T
C
=25
I
C
130
A
@T
C
=80
100
Pulsed Collector Current
I
CP
200 A
Diode Continuous Forward Current
@T
C
=25
I
F
130
A
@T
C
=80
100
Isolation Voltage test AC @ 1 minute
V
iso
2500 V
Junction Temperature
T
j
-40 ~ +150
Storage Temperature
T
stg
-40 ~ +125
Weight Weight
190 5
g
Mounting Torque (M6) M 5 N.m
Terminal Connection torque (M5) M 4 N.m