GL4910
(Ta=25˚C)
0.5
0.8
0.8
(
2.5
)
0.8
0.8
2.15
2- 0.28
2- 0.77
2.54
8˚
8˚
8˚
8˚
1.5
8˚8˚
8˚
8˚
2
1
1
2
50 mA
1
4V
˚C
˚C
260 ˚C
I
F
I
FM
V
R
T
opr
T
stg
T
sol
A
4.0
± 0.2
0.4
MAX.
5.0
± 0.2
R1.75
± 0.1
0.3
MIN.
2 - 0.45
+ 0.2
- 0.1
17.15
+ 1.5
- 1.0
3.75
± 0.2
2 - 0.4
+ 0.2
- 0.1
2.0
± 0.2
Features
1. Small spot light diameter for easy beam diaphragming
2. Uniform emission intensity on chip emitting surface
3. Low peak forward voltage type
Applications
1. Cameras
Outline Dimensions
(Unit : mm)
Gate burrSolder dipping
range
Chip center
(Chip position
: 2.65)
1 Cathode
2 Anode
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Forward current
Peak forward current
Reverse voltage
Operating temperature
Storage temperature
Soldering temperature
*1
*2
-25to+60
-40to+85
*1 30,00 cycles max. on pulse conditions shown in the right drawing
*2 For 5 seconds at the position of 2.15 mm from the resin edge
Soldering area
2.15mm
GL4910
Side View Type Infrared Emitting
Diode for Camera AF
(Automatic Focusing)
Pink
transparent
epoxy resin
* ( ) : Reference dimensions
* Tolerance : ± 0.15 mm
*Expansion range on lens surface of infrared emitted from chips
(*Apparent emission diameter : TYP. φ 0.32 mm)
(Peak forward voltage V
FM
: TYP. 1.7V
)
120 µ s
500 µ s
I
FM
32ms (64 pulses)
1s (1 cycle)
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
■
■
■■
