data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
GL4800
■ Features
3. Radiant flux
4. Epoxy resin package
■ Applications
1. Floppy disk drives
2. Optoelectronic switches
*1 Pulse width<=100µ s, Duty ratio= 0.01
*2 For 3 seconds at the position of 1.8mm from the surface of resin edge.
Parameter Symbol Rating Unit
Power dissipation P 75 mW
Forward current I
F
50 mA
*1
Peak forward current I
FM
1A
Reverse voltage V
R
6V
Operating temperature T
opr
- 25 to + 85
˚C
Storage temperature T
stg
- 40 to + 85
˚C
*2
Soldering temperature T
sol
260 ˚C
GL4800
1. Thin type
(
Thickness : 1.5mm
)
2. Beam angle
(
∆θ : TYP. ± 30˚
)
(
Φ
e
: MIN. 0.7mW at I
F
= 20mA
)
1.6
0.8
1.0
1.7
0.8
1.8
MIN.0.5
2.54
0.8
0.7
2 - C0.5
■ Outline Dimensions
(
Unit : mm
)
(
Ta= 25˚C
)
■ Absolute Maximum Ratings
0.25
1
2
2
1
Protruded resin
Parameter Conditions MIN. TYP. MAX. Unit
Forward voltage - 1.2 1.4 V
Peak forward voltage - 3.0 4.0 V
Reverse current - - 10 µ A
Terminal capacitance - 70 - pF
Frequency response -- 300 - kHz
Radiant flux 0.7 1.6 3.0 mW
Peak emission wavelength - 950 - nm
Half intensity wavelength - 45 - nm
■ Electro-optical Characteristics
(
Ta= 25˚C
)
I
F
= 20mA
I
F
= 20mA
I
F
= 5mA
I
F
= 5mA
I
FM
= 0.5A
V
R
=3V
V
R
= 0, f= 1MHz
Symbol
V
F
V
FM
I
R
C
t
f
c
Φ
e
λ p
∆λ
Rest of gate
Pink transparent
epoxy resin
1 Anode
2 Cathode
Diode
Thin Type Infrared Emitting
φ0.8
3.0
± 0.2
1.5
± 0.2
3.5
± 0.2
17.5
± 0.5
2 - 0.45
2 - 0.9
0.3
MAX.
