PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
*V
CEO
= -25V
* 4 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation voltage
* High Gain
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-30 V
Collector-Emitter Voltage V
CEO
-25 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-10 A
Continuous Collector Current I
C
-4 A
Base Current I
B
-500 mA
Power Dissipation at T
amb
=25°C † P
tot
2.5 W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
† The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches x 2 inches
FZT1149A
C
C
E
SOT223
