SOT 223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 - JUNE 2007
FEATURES
*V
CEO
= 25V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; R
CE(sat)
= 50mΩ at 5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO 25
V
Emitter-
Base Voltage V
EBO
5V
Peak Pulse Current I
CM
20 A
Continuous Collector Current I
C
5 A
Base Current I
B
500 mA
Power Dissipation at T
amb
=25°C † P
tot
2.5 W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1049A
C
C
E
