SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - AUGUST 1997
FEATURES
*V
CEO
= 10V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; R
CE(sat)
= 44mΩ at 5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
35 V
Collector-Emitter Voltage V
CEO
10 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
20 A
Continuous Collector Current I
C
5A
Base Current I
B
500 mA
Power Dissipation at T
amb
=25°C P
tot
2.5 W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
C
C
E
FZT1047A