PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 300 Volt V
CEO
APPLICATIONS
* Telephone dialler circuits
REFER TO MPSA92 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-300 V
Collector-Emitter Voltage V
CEO
-300 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I
C
-500 mA
Power Dissipation at T
amb
=25°C P
tot
680 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +175 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300 V
I
C
=-100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300 V I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-10µA, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.25
µA
V
CB
=-200V, I
E
=0
Emitter Cut-Off Current I
EBO
-0.1
µA
V
EB
=-3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5 V I
C
=-20mA, I
B
=-2mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9 V I
C
=-20mA, I
B
=-2mA
Static Forward Current
Transfer Ratio
h
FE
25
40
25
I
C
=-1mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-30mA, V
CE
=-10V*
Transition
Frequency
f
T
50 MHz I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance C
obo
6pFV
CB
=-20V, f=1MHz
E-Line
TO92 Compatible
FXTA92
3-65
B
C
E
