PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 FEB 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* Low saturation voltage
*P
tot
= 1 Watt
REFER TO ZTX755 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-150 V
Collector-Emitter Voltage V
CEO
-150 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-150 V
I
C
=-100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-150 V I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
-100 nA V
CB
=-125V, I
E
=0
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
-0.5
V
V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1 V I
C
=-500mA, I
B
=-50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0 V IC=-500mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
20
I
C
=-10mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
Transition
Frequency
f
T
30 MHz I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance C
obo
20 pF V
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
E-Line
TO92 Compatible
FXT755
3-59
B
C
E
