PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 FEB 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
*P
tot
= 1 Watt
APPLICATIONS
* Lamp, relay or solenoid drivers
* Audio circuits
* Replacement of TO126 and TO220 devices
REFER TO ZTX753 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-120 V
Collector-Emitter Voltage V
CEO
-100 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-6 A
Continuous Collector Current I
C
-2 A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-120 V
I
C
=-100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-100 V I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.1
-10
µA
µA
V
CB
=-100V, I
E
=0
V
CB
=-100V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-0.1
µA
V
EB
=-4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.17
-0.30
-0.3
-0.5
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.90 -1.25 V I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-0.8 -1.0 V IC=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
55
25
200
200
170
55
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition
Frequency
f
T
100 140 MHz I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance C
obo
30 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
E-Line
TO92 Compatible
FXT753
3-58
B
C
E