NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 60 Volt V
CEO
* 2 Amps continuous current
* Low saturation voltage
*P
tot
= 1 Watt
REFER TO ZTX651 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
6A
Continuous Collector Current I
C
2A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80 V
I
C
=100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
60 V I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
10
µA
µA
V
CB
=60V, I
E
=0
V
CB
=60V,T =100°C
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.23
0.3
0.5
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 1.25 V I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8 1 V IC=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
80
40
200
200
170
80
300
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition
Frequency
f
T
140 175 MHz I
C
=100mA, V
CE
=5V
f=100MHz
Output Capacitance C
obo
30 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300
µs. Duty cycle ≤2%
E-Line
TO92 Compatible
FXT651
3-47
B
C
E
