B
C
E
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 160 Volt V
CEO
* Gain of 5K at I
C
=1 Amp
*P
tot
= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
* Replacement of TO126 and TO220 packages
REFER TO ZTX601B FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
180 V
Collector-Emitter Voltage V
CEO
160 V
Emitter-Base Voltage V
EBO
10 V
Peak Pulse Current I
CM
4A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
180 V
I
C
=100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
160 V I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10 V
I
E
=100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
0.01
10
µA
µA
V
CB
=160V
V
CB
=160V,T =100°C
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=8V, I
C
=0
Colllector-Emitter
Cut-Off Current
I
CES
10
µA
V
CES
=160V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.75
0.85
1.1
1.2
V
V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.7 1.9 V I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.5 1.7 V IC=1A, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
5K
10K
5K
10K
20K
10K
100K
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
150 250 MHz I
C
=100mA, V
CE
=10V
f=20MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
FXT601B
3-42
