NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 SEPTEMBER 1994
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
*P
tot
= 1 Watt
REFER TO ZTX458 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
400 V
Collector-Emitter Voltage V
CEO
400 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
300 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
400 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
100 nA V
CB
=320V
Collector Cut-Off
Current
I
CES
100 nA VCE=320V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.5
V
V
I
C
=20mA, I
B
=2mA
I
C
=50mA, I
B
=6mA
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 V I
C
=50mA, I
B
=5mA
Base-Emitter
Turn On Voltage
V
BE(on)
0.9 V IC=50mA, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V*
Transition Frequency f
T
50 MHz I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5pFV
CB
=20V, f=1MHz
E-Line
TO92 Compatible
3-35
FXT458
B
C
E
