NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
*P
tot
= 1 Watt
REFER TO ZTX451 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80 V
I
C
=100µA, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
60 V I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
µA
V
CB
=60V, I
E
=0
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.35 V I
C
=150mA, I
B
=15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1 V I
C
=150mA, I
B
=15mA*
Static Forward Current
Transfer Ratio
h
FE
50
10
150 I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
150 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
15 pF V
CB
=10V, f=1MHz
E-Line
TO92 Compatible
FXT451
3-32
B
C
E
