1
3
2
SOT23
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODES
ISSUE 3 JANUARY 1996 ✪
PIN CONFIGURATION PARTMARKING DETAILS
SEE TUNING CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Reverse Voltage V
R
30 V
Forward Current I
F
200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V
BR
30 V
I
R
= 10µA
Reverse current I
R
20 nA V
R
= 25V
Series Inductance L
S
3.0 nH f=250MHz
Lead length
≈1.5mm
Diode Capacitance
Temperature Coefficient
T
CC
280 400 ppm/ °C V
R
= 4V, f=1MHz
Lead length
≈1.5mm
Case Capacitance C
C
0.15 pF f=1MHz
TUNING CHARACTERISTICS (at T
amb
= 25°C).
Type No.
Nominal Capacitance (pF)
V
R
= 4V, f=1MHz
Q Figure of MERIT
V
R
= 4V, f=50MHz
Turning Ratio
C
2
/ C
30
f=1MHz Partmark
Detail
Min. Nom. Max. Min. Max.
FMMV2101 6.1 6.8 7.5 450 2.5 3.3 6R
FMMV2103 9.0 10.0 11.0 400 2.6 3.3 6G
FMMV2104 10.8 12.0 13.2 400 2.6 3.3 6H
FMMV2105 13.5 15.0 16.5 400 2.6 3.3 6J
FMMV2107 19.8 22.0 24.2 350 2.7 3.3 6L
FMMV2108 24.3 27.0 29.7 300 2.7 3.3 6M
FMMV2109 29.3 33.0 36.3 280 2.7 3.3 6N
* SELECTED DEVICE RANGE OFFERED ONLY
3 - 185
FMMV2101
to
FMMV2109
