SOT23 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 MARCH 1996
FEATURES
* Avalanche mode operation
* 50A Peak avalanche current
* Low inductance packaging
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL - 413
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
150 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
6V
Continuous Collector Current I
C
100 mA
Peak Collector Current (25ns Pulse Width) I
CM
50 A
Power Dissipation P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CES
150 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
50 V I
C
=10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
6V
I
E
=100µA
Collector Cut-Off Current I
CBO
0.1
µA
V
CB
=120V
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.15 V I
C
=10mA, I
B
=1mA
Base-Emitter
Saturation Voltage
V
BE(sat)
0.8 V I
C
=10mA, I
B
=1mA
Current in Second
Breakdown (Pulsed)
I
USB
22
31
A
A
V
C
=110V, C
CE
=4.7nF*
V
C
=130V, C
CE
=4.7nF*
Static Forward Current
Transfer Ratio
h
FE
50 I
C
=10mA, V
CE
=10V
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I
(USB)
monitor
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
The FMMT413 device is a development product. Samples availability and release to production
scheduled for June 1996
FMMT413
FMMT413
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Emitter Inductance L
e
2.5 nH Standard SOT23 leads
Transition Frequency f
T
150 MHz I
C
=10mA, V
CE
=5V
f=20MHz
Collector-Base
Capacitance
C
cb
2pFV
CB
=10V, I
E
=0
f=1MHz
.
V -
Supply Voltage (V)
I(
-
A
val
anche C
urr
ent (A
)
TYPICAL CHARACTERISTICS
C
B
E
SOT23
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