SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 MARCH 1995 ✪
PARTMARKING DETAIL ZE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-25 V
Collector-Emitter Voltage V
CEO
-25 V
Emitter-Base Voltage V
EBO
-4 V
Continuous Collector Current I
C
-200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-25 V
I
C
=-10µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-25 V I
C
=-1mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-4 V
I
E
=-10µA
Collector Cut-Off Current I
CBO
-50 nA V
CB
=-20V
Emitter Cut-Off Current I
EBO
-50 nA VEB=-3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.4 V I
C
=-50mA, I
B
=-5mA*
Base-Emitter
SaturationVoltage
V
BE(sat)
0.95 V IC=-50mA, I
B
=-5mA*
Static Forward
Current Transfer Ratio
h
FE
120
60
360 I
C
=-2mA, V
CE
=-1V*
I
C
=-50mA, V
CE
=-1V*
Transistion Frequency f
T
250 MHz I
C
=-10mA, V
CE
=-20V, f=100MHz
Output Capacitance C
obo
4.5 pF V
CB
=-5V, I
E
=0, f=140KHz
Input Capacitance C
ibo
10 pF V
BE
=-0.5V, I
E
=0, f=140KHz
Noise Figure N 4 dB
I
C
=-200µA, V
CE
=-5V, R
g
=-2kΩ
f=30Hz to 15KHz at 3dB points
Small Signal Current
Transfer
h
fe
120 180 I
C
=-2mA, V
CE
=-1V, f=1KHz
SWITCHING CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL TYP. UNIT CONDITIONS
Delay Time t
d
25 ns V
CC
=-3V, V
BE(off)
=-0.5V
I
C
=-10mA, I
B1
=-1mA
Rise Time t
r
18 ns
Storage Time t
s
140 ns V
CC
=-3V, I
C
=-10mA
I
B1
=I
B2
=-1mA
Fall Time t
f
15 ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
FMMT4126
C
B
E