SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 MARCH 94 ✪
PARTMARKING DETAIL ZB
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CEO
30 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
40 V
I
C
=10µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30 V I
C
=1mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=10µA
Collector Cut-Off Current I
CBO
50 nA V
CB
=20V
Emitter Cut-Off Current I
EBO
50 nA VEB=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3 V I
C
=50mA, I
B
=5mA*
Base-Emitter
SaturationVoltage
V
BE(sat)
0.95 V IC=50mA, I
B
=5mA*
Static Forward
Current Transfer Ratio
h
FE
50
25
150 I
C
=2mA, V
CE
=1V*
I
C
=50mA, V
CE
=1V*
Transistion Frequency f
T
250 MHz I
C
=10mA, V
CE
=20V, f=100MHz
Output Capacitance C
obo
4pFV
CB
=5V, I
E
=0, f=140KHz
Input Capacitance C
ibo
8pFV
BE
=0.5V, I
E
=0, f=140KHz
Noise Figure N 6 dB
I
C
=200µA, V
CE
=5V, R
g
=2kΩ
f=30Hz to 15KHz at 3dB points
Small Signal Current
Transfer
h
fe
50 200 I
C
=2mA, V
CE
=1V, f=1KHz
SWITCHING CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL TYP. UNIT CONDITIONS
Delay Time t
d
24 ns V
CC
=3V, V
BE(off)
=0.5V
I
C
=10mA, I
B1
=1mA
Rise Time t
r
13 ns
Storage Time t
s
125 ns V
CC
=3V, I
C
=10mA
I
B1
=I
B2
=1mA
Fall Time t
f
11 ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
FMMT4123
C
B
E