SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 2 – SEPTEMBER 94 ✪
COMPLIMENTARY TYPES – FMMT3903 - FMMT3905
FMMT3904 - FMMT3906
PARTMARKING DETAIL – FMMT3903 - 1W
FMMT3904 - 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
60 V
CollectorEmitter Voltage V
CEO
40 V
EmitterBase Voltage V
EBO
6V
Continuous Collector Current I
C
200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
FMMT3903 FMMT3904
UNIT
CONDITIONS.
MIN. MAX. MIN. MAX.
Collector Base
Breakdown Voltage
V
(BR)CBO
60 60 V
I
C
=10µA, I
E
=0
CollectorEmitter
Breakdown Voltage
V
(BR)CEO
40 40 V I
C
=1mA, I
B
=0*
EmitterBase
Breakdown Voltage
V
(BR)EBO
66 V
I
E
=10µA, I
C
=0
CollectorEmitter
CutOff Current
I
CEX
50 50 nA V
CE
=30V, V
BE(off)
=3V
Base CutOff
Current
I
BEX
50 50 nA V
CE
=30V, V
EB(off)
=3V
Static Forward
Current Transfer
Ratio
h
FE
20
35
50
30
15
150
40
70
100
60
30
300
I
C
=0.1mA, V
CE
=1V*
I
C
=1mA, V
CE
=1V*
I
C
=10mA, V
CE
=1V*
I
C
=50mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
CollectorEmitter
Saturation Voltage
V
CE(sat)
0.2
0.3
0.2
0.3
V
V
I
C
=10mA, I
B
=1mA*
I
C
=50mA, I
B
=5mA*
BaseEmitter
Saturation Voltage
V
BE(sat)
0.65 0.85
0.95
0.65 0.85
0.95
V
V
I
C
=10mA, I
B
=1mA*
I
C
=50mA, I
B
=5mA*
Transition
Frequency
f
T
250 300 MHz I
C
=10mA, V
CE
=20V
f=100MHz
Output
Capacitance
C
obo
44pFV
CB
=5V, I
E
=0, f=100KHz
Input Capacitance C
ibo
88pFV
BE
=0.5V, I
C
=0, f=100KHz
FMMT3903
FMMT3904
C
B
E
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