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FMMT2369-1J

FMMT2369-1J首页预览图
型号: FMMT2369-1J
PDF文件:
  • FMMT2369-1J PDF文件
  • FMMT2369-1J PDF在线浏览
功能描述: SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS
PDF文件大小: 38.28 Kbytes
PDF页数: 共2页
制造商: ZETEX[Zetex Semiconductors]
制造商LOGO: ZETEX[Zetex Semiconductors] LOGO
制造商网址: http://www.diodes.com/
捡单宝FMMT2369-1J
PDF页面索引
120%
SOT23 NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
ISSUE 3  AUGUST 1995
APPLICATIONS
These devices are suitable for use in high speed, low current
switching applications
PARTMARKING DETAILS
FMMT2369 - 1J
FMMT2369R - 9R
FMMTA2369A - P5
FMMTA2369AR - 9A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CES
40 V
Collector-Emitter Voltage V
CEO
15 V
Emitter-Base Voltage V
EBO
4.5 V
Continuous Collector Current I
C
200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL FMMT2369 FMMT2369A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
40 40 V
I
C
=10µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
15 15 V I
C
=10mA, I
B
=0*
V
(BR)CES
40 40 V
I
C
=10µA, V
BE
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
4.5 4.5 V
I
E
=10µA, I
C
=0
Collector Cut-Off
Current
I
CBO
400 25 nA V
CB
=20V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25 0.20 V I
C
=10mA, I
B
=1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.7 0.85 0.7 0.85 V I
C
=10mA, I
B
=1mA*
Static Forward
Current Transfer
Ratio
h
FE
40
20
20
120 40
20
120 I
C
=10mA, V
CE
=1V*
I
C
=10mA, V
CE
=1V, T
amb
=-55°C*
I
C
=100mA, V
CE
=1V*
I
C
=100mA, V
CE
=2V*
Output Capacitance C
obo
44pFV
CB
=5V, I
E
=0, f=140KHz
Turn-on Time t
on
12 12 ns V
CC
=3V, V
BE(off)
=1.5V I
C
=10mA,
I
B1
=3mA (See t
ON
circuit)
Turn-off Time t
off
18 18 ns V
CC
=3V, I
C
=10mA, I
B1
=3mA
I
B2
=1.5mA(See t
OFF
circuit)
Storage Time t
s
13 13 ns I
C
=I
B1
= I
B2
=10mA
(See Storage test circuit)
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle 2%
Spice parameter data is available upon request for this device
FMMT2369
FMMT2369A
270
3K3
3V
C < 4pF *
S
t
1
< 1ns
+10.6V
0
-1.5V
Pulse width (t1)=300ns
Duty cycle = 2%
t
ON
CIRCUIT
270
3K3
3V
C < 4pF *
S
t
1
< 1ns
+10.75V
0
-4.15V
Pulse width (t
1
)=300ns
Duty cycle = 2%
t
OFF
CIRCUIT
980
500
10V
C < 3pF *
S
t
1
< 1ns
+6V
0
-4V
Pulse width (t1)=300ns
Duty cycle = 2%
* Total shunt capacitance of test jig and connectors
STORAGE TEST CIRCUIT
3-69
C
B
E
SOT23
FMMT2369
FMMT2369A
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