SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 3 FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222 1BZ FMMT2222A 1P
FMMT2222R 2P FMMT2222AR 3P
COMPLEMENTARY TYPES
FMMT2222 FMMT2907
FMMT2222A FMMT2907A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT
Collector-Base Voltage V
CBO
60 75 V
Collector-Emitter Voltage V
CEO
30 40 V
Emitter-Base Voltage V
EBO
56V
Continuous Collector Current I
C
600 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
60 75 V
I
C
=10µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30 40 V I
C
=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
56V
I
E
=10µA, I
C
=0
Collector Cut-Off
Current
I
CBO
10
10
10
10
nA
µA
nA
µA
V
CB
=50V, I
E
=0
V
CB
=60V, I
E
=0
V
CB
=50V, I
E
=0, T
amb
=150°C
V
CB
=60V, I
E
=0, T
amb
=150°C
Emitter Cut-Off
Current
I
EBO
10 10 nA V
EB
=3V, I
C
=0
Collector-Emitter
Cut-Off Current
I
CEX
10 10 nA V
CE
=60V, V
EB(off)
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
1.0
0.3
1.0
V
V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.6 2.0
2.6
0.6 1.2
2.0
V
V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
Static Forward
Current Transfer
Ratio
h
FE
35
50
75
35
100
50
30
300
35
50
75
35
100
50
40
300
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V, T
amb
=-55°C
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Transition
Frequency
f
T
250 300 MHz I
C
=20mA, V
CE
=20V
f=100MHz
Output Capacitance C
obo
88pFV
CB
=10V, I
E
=0,
f=140KHz
Input Capacitance C
ibo
30 25 pF V
EB
=0.5V, I
C
=0
f=140KHz
Delay Time t
d
10 10 ns V
CC
=30V, V
BE(off)
=0.5V
I
C
=150mA, I
B1
=15mA
(See Delay Test Circuit)
Rise Time t
r
25 25 ns
Storage Time t
s
225 225 ns V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
(See Storage Test
Circuit)
Fall Time t
f
60 60 ns
FMMT2222
FMMT2222A
Scope:
R
in
> 100 k
Ω
C
in
< 12 pF
Rise Time < 5 ns
0
0.5V
9.9V
Generator rise time <2ns
Pulse width (t
1
)<200ns
Duty cycle = 2%
+30V
200
Ω
619
Ω
DELAY AND RISE TEST CIRCUIT
1N916
1K
Ω
Ω
Scope:
R > 100 k
Ω
C
< 12 pF
Rise Time < 5 ns
-13.8 V
=500
µ
s
=100
µs
<5ns
+16.2 V
0
Duty cycle = 2%
STORAGE TIME AND FALL TIME TEST CIRCUIT
C
B
E
