SOT23 SILICON PLANAR HIGH SPEED
SWITCHING DIODE
ISSUE 2 - OCTOBER 1995
PARTMARKING DETAIL 5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Breakdown Voltage Voltage (I
R
=100µA)
V
(BR)
70 V
Peak Forward Current
I
F
200 mA
Peak Forward Surge Current I
FM
500 mA
Power Dissipation at T
amb
= 25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltage V
(BR)
70 V
I
R
=10µA
Forward Voltage V
F
0.5
0.8
0.7
1.1
V
V
I
F
=1mA
I
F
=100mA
Reverse Current I
R
0.1
µA
V
R
=50V
Recovery Time* t
rr
5nsI
F
= I
R
=10mA,
I
R(REC)
=1 mA
Diode Capacitance C
d
2.5 pF V
R
=0, f=1MHz
*For switching test circuit diagram see FMMD7000 datasheet
SOT23
FMMD6050
DIODE PIN CONNECTION
1
3
2
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