2013. 7. 24 1/2
SEMICONDUCTOR
TECHNICAL DATA
FM200HB1D5B
Revision No : 0
150V / 200A
2 - PACK MOSFET MODULE
(Half - Bridge)
FEATURES
Low R
DS(on)
High frequency operation
dv/dt ruggedness
Fast switching
APPLICATION
Motor control
Battery management system
Electric vehicle
INTERNAL CIRCUIT
CHARACTERISTIC SYMBOL RATING UNIT
Drain-to-Source Breakdown Voltage
V
DSS
150 V
Gate to Source Voltage
V
GSS
30
V
Continuous Drain Current
@T
C
=25
I
D
340
A
@T
C
=100
240
Pulsed Drain Current
@T
C
=25 , Pulsed
I
DM
1300 A
Isolation Voltage Test
AC@1minute
V
ISO
2500 V
Junction Temperature
T
J
-40 +150
Storage Temperature
T
stg
-40 +125
Weight Weight
360 5
g
Mounting Torque (M6) M 5
N m
Terminal Connection Torque (M5) M 4
N m
1. D2/S1
2. S2
3. D1
4. G1
5. S1
6. G2
7. S2
