SOT23 SILICON PLANAR LOW LEAKAGE
COMMON CATHODE DIODE PAIR
ISSUE 2 SEPTEMBER 1995 ✪
PART MARKING DETAIL D58
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Repetitive Peak Reverse Voltage V
RRM
100 V
Average Rectified Forward Current I
F(AV)
250 mA
Non-Repetitive Peak Forward Current (t=1
µs)
I
FSM
3.0 A
Power Dissipation at T
amb
= 25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Reverse Current I
R
3
5
nA
µA
V
RRM
=50V
V
RRM
=100V, T
amb
=150°C
Reverse Recovery Time* t
rr
400 ns I
F
= I
R
=50 400mA
Forward Recovery Time t
fr
10 ns I
F
=10mA
Diode Capacitance C
d
4pFV
R
=1V, f=1MHz
Forward Overshoot Voltage V
fr
Typ
0.9 V
I
F
=10mA,
Rise time=5ns
±20%
Forward Voltage V
F
1.4 V I
F
=-200mA
*Time for I
R
to recover to 10% of I
R
peak
For typical characteristics graphs see FLLD263 datasheet.
SOT23
FLLD258
1
23
1
3
2
3 - 96
