SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995 ✪
FEATURES
* 60 Volt V
CEO
* 1 Amp cont inuous current
*P
tot
= 1 Watt
COMPLEMEN TARY TY PE – FCX591
PARTMARKI N G DETAIL – N1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
1A
Peak Pulse Current I
CM
2A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V
(BR)CBO
80 V
I
C
=100µA
V
CEO(sus)
60 V I
C
=10mA*
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off Currents I
CBO
100 nA V
CB
=60V,
I
CES
100 nA VCE=60V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
0.50
V
V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1 V I
C
=1A, I
B
=100mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1.0 V I
C
=1A, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
100
100
80
30
300
I
C
=1mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
C
obo
10 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT491 datasheet
FCX491
C
B
3 - 86
