SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 10A Peak Pulse Current
* Excellent H
FE
Characteristics up to 10 Amps
* Extremely Low Saturation Voltage E.g. 17mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
57mΩ at 3A
Complimentary Type - FCX1151A
Partmarking Detail - 051
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
150 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current ** I
CM
10 A
Continuous Collector Current I
C
3A
Power Dissipation at T
amb
=25°C P
tot
1 †
2 ‡
W
W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1051A
