2007. 5. 21 1/2
SEMICONDUCTOR
TECHNICAL DATA
F1B2CCI/CAI
STACK SILICON DIFFUSED DIODE
Revision No : 1
HIGH SPEED RECTIFIER APPLICATION.
FEATURES
Average Output Rectified Current : I
O
=10A(Tc=101 ).
Repetitive Peak Reverse Voltage : V
RRM
=200V.
Rectifier Stack of Single Phase Center Tap Type.
POLARITY
CC TYPE CA TYPE
CATHODE COMMON ANODE COMMON
DIM
MILLIMETERS
TO-220IS
0.76+0.09/-0.05
A
B
C
D
E
F
G
0.5+0.1/-0.05
H
1.2+0.25/-0.1
1.5+0.25/-0.1
J
K
L
M
N
P
Q
R
F
Q
1
2
3
L
P
N
B
G
J
M
D
N
H
E
R
K
L
S
0.5 Typ
S
D
A
C
2.70 0.3
+
_
12.0 0.3
+
_
13.6 0.5
+
_
3.7 0.2
+
_
Φ3.2 0.2
+
_
10.0 0.3
+
_
15.0 0.3
+
_
3.0 0.3
+
_
4.5 0.2
+
_
2.54 0.1
+
_
+
2.6 0.2
_
6.8 0.1
+
_
1. ANODE
CC TYPE
2. CATHODE COM
3. ANODE
1. CATHODE
CA TYPE
2. ANODE COM
3. CATHODE
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage (Note)
V
FM
I
FM
=5A
- - 1.4 V
Repetitive Peak Reverse Current (Note)
I
RRM
V
RRM
=Rated
- - 10
A
Reverse Recovery Time
t
rr
I
F
=0.1A, I
R
=0.1A
- - 400 nS
Thermal Resistance
R
th
(j-c)
Junction to Case - - 3.5
/W
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak
Reverse Voltage
F1B2CCI
F1B2CAI
V
RRM
200 V
Average Output Rectified
Current (Tc=101 ) (Fig.)
I
O
10 A
Peak One Cycle Surge Forward
Current (Non-Repetitive)
I
FSM
60 (50Hz)
A
70 (60Hz)
Junction Temperature
T
j
-40 150
Storage Temperature Range
T
stg
-40 150
MAXIMUM RATING (Ta=25 )
13
2
Note : A Value of one cell.
Fig. EXAMPLE OF RECTIFING CIRCUIT
RECTIFIER STAC
I =10A
LOAD
O
13
2
