2004. 3. 11 1/1
SEMICONDUCTOR
TECHNICAL DATA
E65A37VBS, E65A37VBR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=65A.
Zener Voltage : 37V(Typ.)
POLARITY
E65A37VBS (+ Type)
E65A37VBR (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
I
FM
=100A
- - 1.08 V
Zener Voltage
V
Z
I
Z
=10mA
34 37 40 V
Reverse Current
I
R
V
R
=32V
- - 0.3
A
Transient Thermal Resistance
V
F
I
FM
=100A, I
M
=100mA, Pw=100mS
- - 50 mV
Breakdown Voltage
V
br
I
rsm
=65A, Pw=10mS
- - 54 V
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , V
R
=32V
- - 100
A
Temperature Resistance
R
th
DC total junction to case - - 0.5
/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
65 A
Peak 1 Cycle Surge Current
I
FSM
450 (60Hz) A
Non-Repetitive Peak
Reverse Surge Current (10mS)
I
RSM
65 A
Transient Peak Reverse Voltage
V
RSM
32 V
Peak Reverse Voltage
V
RM
32 V
Junction Temperature
T
j
-40 215
Storage Temperature Range
T
stg
-40 215
