2005. 3. 7 1/1
SEMICONDUCTOR
TECHNICAL DATA
E50A2CPS, E50A2CPR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=50A.
Reverse Voltage : 200V(Min.)
POLARITY
E50A2CPS (+ Type)
E50A2CPR (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
I
FM
=100A
- - 1.05 V
Reverse Voltage
V
R
I
R
=5mA
200 - - V
Reverse Current
I
R
V
R
=200V
- - 50
A
Transient Thermal Resistance
V
F
I
FM
=100A, I
M
=100mA,
Pw=100ms
- - 130 mV
Reverse Recovery Time
t
rr
I
F
=100mA, I
RP
=100mA
- - 15
s
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , V
R
=200V
- - 2.5 mA
Temperature Resistance
R
th
Junction to Base - - 0.8
/W
Junction to Fin - - 1.0
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
50 A
Peak 1 Cycle Surge Current
I
FSM
500 (60Hz) A
Repetitive Peak Reverse Voltage
V
RRM
200 V
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200
