2002. 1. 30 1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A37VBS, E35A37VBR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
ᴌAverage Forward Current : I
O
=35A.
ᴌZener Voltage : 37V(Typ.)
POLARITY
E35A37VBS (+ Type)
E35A37VBR (- Type)
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS
B-PF
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3 0.04
4.2 0.2
8.0 0.2
TYP 0.5
Φ10.0 0.2
0.4 0.1x45
0.2+0.1
28.35 0.5
A
8.5 MAX
H
B
C
D
E
F
G
H
I
J
K
F
E
I
D
G
B
J
K
A
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
I
FM
=100A
- - 1.15 V
Zener Voltage
V
Z
I
Z
=10mA
34 37 40 V
Reverse Current
I
R
V
R
=32V
- - 10
ỌA
Transient Thermal Resistance
ẤV
F
I
FM
=100A, I
M
=100mA, Pw=100mS
- - 70 mV
Breakdown Voltage
V
br
I
rsm
=35A, Pw=10mS
- - 55 V
Temperature Coefficient
ề
T
I
Z
=10mA
- 27 -
mV/ᴱ
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150ᴱ, V
R
=32V
- - 100
ỌA
Temperature Resistance
R
th
DC total junction to case - - 0.8
ᴱ/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
35 A
Peak 1 Cycle Surge Current
I
FSM
300 (60Hz) A
Repetitive Peak
Reverse Surge Current
(Pulse width=10mS)
I
RSM
35 A
Transient Peak Reverse
Voltage
V
RSM
34 V
Peak Reverse Voltage
V
RM
32 V
Junction Temperature
T
j
-40ᴕ215
ᴱ
Storage Temperature Range
T
stg
-40ᴕ215
ᴱ