2002. 10. 9 1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A2CDS, E35A2CDR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=35A.
Reverse Voltage : 200V(Min)
POLARITY
E35A2CDS E35A2CDR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
I
FM
=100A
- - 1.05 V
Reverse Voltage
V
R
I
R
=5mA
200 - - V
Reverse Current
I
R
V
R
=200V
- - 50
A
Reverse Recovery Time
t
rr
I
F
=0.1A, I
R
=0.1A
- - 15
S
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , V
R
=200v
- - 2.5 mA
Temperature Resistance
R
th
DC total Junction to case - 0.8 -
/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
35 A
Peak 1 Cycle Surge Current
I
FSM
350 (60Hz) A
Repetitive Peak Revese Voltage
V
RRM
200 V
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200
