2000. 7. 11 1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A23VDS, E35A23VDR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=35A.
Zener Voltage : 23V(Typ.)
POLARITY
E35A23VDS (+ Type)
E35A23VDR (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage
V
FM
I
FM
=100A
- - 1.15 V
Reverse Voltage
V
Z
I
R
=10mA
20 23 26 V
Repetitive Peak Reverse Current
I
RRM
V
R
=17V
- - 10
A
Zener Voltage
Temperature Coefficient
T
I
Z
=10mA
- 0.077 -
%/
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , V
R
=V
RM
- - 2.5 mA
Temperature Resistance
R
th
Junction to case - 0.8 -
/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
35 A
Peak 1 Cycle Surge Current
I
FSM
350
(10ms Condition)
A
Repetitive Peak Revese Voltage
V
RRM
17 V
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200