2004. 8. 10 1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A21VBS, E35A21VBR
STACK SILICON DIFFUSED DIODE
Revision No : 5
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=35A.
Zener Voltage : 21V(Typ.)
POLARITY
E35A21VBS (+ Type)
E35A21VBR (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage
V
F
I
FM
=100A
- - 1.10 V
Zener Voltage
V
Z
I
Z
=10mA
19 21 23 V
Reverse Current
I
R
V
R
=18V
- - 0.3
A
Transient Thermal Resistance
V
F
I
FM
=100A, I
M
=100mA, Pw=100mS
- - 70 mV
Breakdown Voltage
V
br
I
rsm
=42A, Pw=10mS
- - 32 V
Temperature Coefficient
T
I
Z
=10mA
- 15.7 -
mV/
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , V
R
=18V
- - 100
A
Temperature Resistance
R
th
DC total junction to case - - 0.8
/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
35 A
Peak 1 Cycle Surge Current
I
FSM
300 (60Hz) A
Non-Repetitive Peak
Reverse Surge Current
(10mS)
I
RSM
42 A
Transient Peak Reverse Voltage
V
RSM
19 V
Peak Reverse Voltage
V
RM
16 V
Junction Temperature
T
j
-40 215
Storage Temperature Range
T
stg
-40 215