2002. 10. 9 1/2
SEMICONDUCTOR
TECHNICAL DATA
E30A27VS, E30A27VR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=30A.
POLARITY
E30A27VS E30A27VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Zener Voltage
V
Z
I
Z
=10mA
24 - 30 V
Peak Forward Voltage
V
FM
I
FM
=100A
- - 1.2 V
Repetitive Peak Reverse Current
I
RRM
V
RRM
=24V
- - 50
A
Zener Voltage
Temperature Coefficient
r
Z
I
Z
=10mA
23 - 36
mV/
Reverse Recovery Time
t
rr
I
F
=0.1A, I
R
=0.1A
- - 15
S
Temperature Resistance
R
th
DC total junction to case - - 1.0
/W
CHARACTERISTIC SYMBOL RATING UNIT
DC Reverse Voltage
V
DC
24 V
Average Forward Current
I
F(AV)
30 A
Peak 1 Cycle Surge Current
I
FSM
250 (50Hz) A
Non-Repetitive Reverse 1 Cycle
Surge Current
I
RSM
50 A
Junction Temperature
T
j
-40 150
Storage Temperature Range
T
stg
-40 150