2002. 10. 9 1/1
SEMICONDUCTOR
TECHNICAL DATA
E30A23VPS, E30A23VPR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=30A.
Zener Voltage : 23V(Typ.)
POLARITY
E30A23VPS E30A23VPR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage
V
FM
I
FM
=100A
- - 1.17 V
Zener Voltage
V
Z
I
Z
=10mA
21 23 25 V
Repetitive Peak Reverse Current
I
RRM
V
R
=V
RM
- - 10
A
Transient Thermal Resistance
V
F
I
FM
=100A
- - 140 mV
Reverse Leakage Current
Under High Temperature
HIR
T
a
=150 , V
R
=V
RM
- - 2.5 mA
Temperature Resistance
R
th
DC total junction to case - - 1.0
/W
CHARACTERISTIC SYMBOL RATING UNIT
Average Forward Current
I
F(AV)
30 A
Peak 1 Cycle Surge Current
I
FSM
300(50Hz) A
Repetitive Peak Reverse
Surge Current
I
RSM
30 A
Transient Peak Reverse Voltage
V
RSM
17 V
Peak Reverse Voltage
V
RM
17 V
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200