1998. 2. 19 1/1
SEMICONDUCTOR
TECHNICAL DATA
E25A2CPS, E25A2CPR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
ᴌAverage Forward Current : I
O
=25A.
ᴌReverse Voltage : 200V(Min.)
POLARITY
E25A2CPS (+ Type)
E25A2CPR (- Type)
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS
A
B
D
E
1.55
PF
Φ11.7+0.1/-0
3.85+0/-0.2
Φ1.45 0.1
D
L1
B
G
L2
E
F1
F2
A
0.5
3.1
8.4 MAX
G
F2
L1
0.32
MILLIMETERSDIM
F1
L2
DIM
MILLIMETERS
TYPE
R
S
POLARITY
21.5+0/-1.5
17.5+0/-1.5
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage
V
FM
I
FM
=100A
- - 1.18 V
Reverse Voltage
V
RM
I
R
=5mA
200 - - V
Repetitive Peak Reverse Current
I
RRM
V
R
=200V
- - 50
ỌA
Reverse Recovery Time
t
rr
I
F
=-I
R
100mA
- - 15
ỌS
Transient Thermal Resistance
ẤV
F
I
FM
=100A, Im=100mA,
Pt=100mS
- - 150 mV
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150ᴱ, V
R
=V
RM
- - 2.5 mA
Temperature Resistance
R
th
Junction to Case - - 0.93
ᴱ/W
Junction to Fin - - 1.13
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak
Reverse Voltage
V
RRM
200 V
Non-Repetitive Peak
Reverse Voltage
P
RM
1.35
(Pulse duration 30ỌS
Non-repetitive)
kW
Average Forward Current
I
F(AV)
25 A
Peak 1 Cycle Surge Current
I
FSM
250
(10mS Condition
Half sine wave 1 cycle)
A
Junction Temperature
T
j
-40ᴕ200
ᴱ
Storage Temperature Range
T
stg
-40ᴕ200
ᴱ
