Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 3.0A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Top View
Marking Code: DS32W ---S32
DS34W ---S34
DS36W ---S36
DS38W ---S38
DS310W ---S310
DS312W ---S312
DS315W ---S315
DS320W ---S320
Simplified outline SOD-123FL and symbol
Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum Average Forward Rectified Current
Typical Junction Capacitance
20
40
V
14
28
V
V
3.0
0.5
10
-55 ~ +150
A
A
V
mA
pF
°C
Units
Absolute Maximum Ratings and Electrical characteristics
Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
25 °C
20 40
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 3 A
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Operating Junction Temperature Range
DS32W DS34W DS36W DS38W DS310W DS312W DS315W DS320W
T = 25°C
a
T =100°C
a
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
j
T
j
Symbols
T
stg
Storage Temperature Range
60
42
60
80
56
80
100
100
0.55 0.70 0.85
250
-55 ~ +150
°C
120
120
150
105
150
200
140
200
0.95
0.3
5
160
80
Typical Thermal Resistance
R
θJA
°C/W
7080
70 84
DS32W THRU DS320W
Page 1 of 3
1
2
(1)
(2)
Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)
(1)
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0