D2022UK
Document Number 3827
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
P
D
Power Dissipation
BV
DSS
Drain – Source Breakdown Voltage *
BV
GSS
Gate – Source Breakdown Voltage *
I
D(sat)
Drain Current *
T
stg
Storage Temperature
T
j
Maximum Operating Junction Temperature
125W
65V
±20V
5A
–65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
45W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM mm Tol. Inches Tol.
A 16.38 0.26 0.645 0.010
B 1.52 0.13 0.060 0.005
C 45° 5° 45° 5°
D 6.35 0.13 0.250 0.005
E 3.30 0.13 0.130 0.005
F 14.22 0.13 0.560 0.005
G 1.27 x 45° 0.13 0.05 x 45° 0.005
H 1.52 0.13 0.060 0.005
I 6.35 0.13 0.250 0.005
J 0.13 0.02 0.005 0.001
K 2.16 0.13 0.085 0.005
M 1.52 0.13 0.060 0.005
N 5.08 MAX 0.200 MAX
O 18.90 0.13 0.744 0.005
DQ
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 GATE 1
PIN 2 DRAIN 1
PIN 4 GATE 2
* Per Side
