DS06-20209-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
Semicustom
CMOS
Standard cell
CS86 Series
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DESCRIPTION
The CS86 series of 0.18 µm standard cells is a line of CMOS ASICs based on higher integration implemented
by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81
series.
The CS86 series has three types of cell sets (CS86MN, CS86MZ, and CS86ML), covering a variety of applications,
from portable devices requir ing low power consumption to image processors requir ing large-scale circuitry and
high speed.The three types of cell sets can be contained on one chip, allowing those system LSIs to be imple-
mented which require low power consumption as well as high-speed operation for certain types of processing.
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FEATURES
• Technology : 0.18 µm silicon-gate CMOS, 4- to 6-layer wiring
The same chip can therefore incorporate the standard transistor cell and the ultrahigh-
speed or low-leakage process cell together.
• Supply voltage : +1.8 V ± 0.15 V (normal) to +1.1 V ± 0.1 V
• Junction temperature range : −40 °C to +125 °C
• Cell set
CS86MN : Offers standard transistor characteristics. Designed as a library for products requiring higher
throughputs.
CS86MZ : Offers transistor characteristics for ultra high-speed operation. Designed as a library for
products that require higher processing speeds than those provided by CS86MN.
CS86ML : Offers transistor charactersistics with less leak current. Designed as a library for mobile
devices and other products requiring lower power consumption.
• Cell Specifications :
*1 : 2 input NAND cell (low-power type) , F/O = 2, normal load, Power supply voltage 1.8 V, Temperature = +25 °C
*2 : 2 input NAND cell (low-power type) , F/O = 1, 4 Grid, Power supply voltage 1.8 V, Temperature = +25 °C
*3 : 2 input NAND cell (low-power type) , F/O = 0, non load, Power supply voltage 1.8 V, Temperature = +25 °C
(Continued)
Cell set name CS86MZ CS86MN CS86ML
Delay time*
1
70 ps 88 ps 136 ps
Power consumption*
2
42.7 nW/MHz 40.1 nW/MHz 38.3 nW/MHz
Leak power*
3
3.922 nW 0.023 nW 0.0067 nW
