CE66 Series Embedded Array
0.35µm CMOS Technolog y
Features
▼
Description
▼
Embedded
Hard
Macro
Fixed
Layout
Soft Macro
Fixed
Layout
Soft Macro
Clock Tree
Clk
5V I/O
5V I/O
5V I/O
5V I/O
5V I/O
3V I/O
3V I/O
3V I/O
PCML
3V I/O
3V I/O
5V I/O
5V I/O
5V I/O
5V I/O
5V I/O
• 0.28µm L
eff
(0.34µm drawn)
• Propagation delay of 98 ps
• Mixed-signal macros: A/D and D/A converters
• High-density diffused RAMs and ROMs
• Separate core and I/O supply voltages
• I/Os: 5V, 3.3V, 5V tolerant
• Core power supply voltage: 3.3V, 2.5V~2.0V
• Junction temperature: -40ºC~125ºC
• Special I/Os: PCI, I
2
C, USB
• Analog and digital PLLs
• Packaging options: QFP, HQFP, LQFP, TQFP, PBGA,FBGA
• Support for major third party EDA tools
Fujitsu’s CE66 is a series of high-performance, CMOS
embedded arrays featuring mixed-signal macros, diffused
high-speed RAMs, ROMs, and a variety of other embedded
functions. T he CE66 series combines the density and
performance of standard cells with the time-to-market
advantage of gate arrays. In addition, the I/Os, operating
at 5V, 3.3V, and 5V tolerant conditions, are designed to
provide cost-effective solutions for both core-limited and
pad-limited designs. T he CE66 series features a very low
power consumption of 0.29µW/gate/MHz at 3.3V. Potential
applications for the CE66 series include the consumer
market, communications, and networking designs.
P-Series with 100µm Inline Pad Pitch
Frame Total Gates Total Pads Signals
CE66P1 188K 144 126
CE66P2 233K 160 138
CE66P3 283K 176 132
CE66P4 337K 192 152
CE66P5 396K 208 178
CE66P6 427K 216 178
CE66P7 460K 224 178
CE66P8 528K 240 206
CE66P9 602K 256 228
CE66PA 680K 272 228
CE66PB 761K 288 228
CE66PC 847K 304 264
CE66PD 940K 320 264
CE66PE 1037K 336 264
CE66PF 1138K 352 312
S-Series with 70µm Inline Pad Pitch
Frame Total Gates Total Pads Signals
CE66S1 91K 144 126
CE66S2 113K 160 138
CE66S3 137K 176 152
CE66S4 164K 192 160
CE66S5 207K 216 178
CE66S6 256K 240 193
CE66S7 311K 264 228
CE66S8 391K 296 248
CE66S9 481K 328 248
CE66SA 580K 360 312
