2010. 3. 22 1/1
SEMICONDUCTOR
TECHNICAL DATA
KTC9014
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.).
Low Noise :NF=1dB(Typ.) at f=1kHz.
Complementary to KTC9015.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification A:60 150, B:100 300, C:200 600, D:400 1000
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
- - 50 nA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
- - 100 nA
DC Current Gain
h
FE
(Note) V
CE
=5V, I
C
=1mA
60 - 1000
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
- 0.1 0.25 V
Transition Frequency
f
T
V
CE
=10V, I
C
=1mA, f=100MHz
60 - - MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
- 2.0 3.5 pF
Noise Figure NF
V
CE
=6V, I
C
=0.1mA, Rg=10k , f=1kHz
- 1.0 10 dB
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
150 mA
Emitter Current
I
E
-150 mA
Collector Power Dissipation
P
C
*
625
mW
400
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
