SOT89 NPN SILICON P LANAR
DARLINGTON TRANSIS TOR
ISSUE 3 – JANUARY 1996
FEATURES
* Fast Switching
* High h
FE
PARTMAKING DETAIL — AS3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
90 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
10 V
Pea Pulse Current I
CM
1.5 A
Continuous Collector Current I
C
500 mA
Base Curr ent I
B
100 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
90 V
I
C
=10µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80 V I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10 V
I
E
=10µA, I
C
=0
Emitter Cut-Off Current I
EBO
10
µA
V
EB
=8V, I
E
=0
Collector-Emitter
Cut-Off Curre nt
I
CES
10
µA
V
CE
=80V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.3
1.3
V
V
I
C
=500mA, I
B
=0.5mA
I
C
=500mA, I
B
=0.5mA
T
j
=150°C
Base-Emitter
Saturation Voltage
V
BE(sat)
1.9 V I
C
=500mA, I
B
=0.5mA
Static Forward Current
Transfer Ratio
h
FE
1K
2K
I
C
=150mA, V
CE
=10V*
I
C
=-500mA, V
CE
=-10V*
Turn On Time t
on
400 Typical ns I
C
=500mA
I
Bon
=I
Boff
=0.5mA
Turn Off Time t
off
1.5K Typical ns
* Measure d under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT614 datasheet.
BST52
C
C
B
E
SOT89
3 - 80
