SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – FEBRUARY 1996 ✪
FEATURES
* High V
CEO
* Low saturatio n voltage
COMPLEMENTA RY TYPE – BST39
PARTMARKIN G DETAIL – BT2
ABSOLUTE MAXIMUM RATINGS.
PARAMETE R SYMBOL VALUE UNIT
Collector -Base Volta ge V
CBO
-350 V
Collector-Emitte r Voltage V
CEO
-300 V
Emitter-Base Voltage V
EBO
-4 V
Peak Pulse Curr ent I
CM
-1 A
Continuo us Collector Current I
C
-500 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature
Range
T
j
:T
stg
-65 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETE R SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector -Base
Breakdown Voltage
V
(BR)CBO
-350 V
I
C
=-100µA
Collector-Emitte r
Breakdown Voltage
V
(BR)CEO
-300 V I
C
=-1mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-4 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-1
µA
V
CB
=-280V
Collector Cut-Off
Current
I
CEO
-50
µA
V
CB
=-250V
Emitter Cut-Off Current I
EBO
-20
µA
V
EB
=-4V
Collector-Emitte r
Saturation Voltage
V
CE(sat)
- 2.0
-0.5
V
V
I
C
=-50mA, I
B
=-5mA*
I
C
=-30mA, I
B
=-3mA*
Static Forward Current
Transfer Ratio
h
FE
30 150 I
C
=-50mA, V
CE
=-10V*
Transition Fre quency f
T
15 MHz I
C
=-10mA, V
CE
=-10V*
f = 30MH z
Output Capacita nce C
obo
15 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA92 datasheet.
BST16
C
C
B
E
SOT89
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